Structural disorder induced in hydrogenated amorphous silicon by light soaking

Electron drift mobility measurements on annealed and light-soaked hydrogenated amorphous silicon

We measured the effects of light soaking on the electron drift mobility for three specimens of hydrogenated amorphous silicon (a-Si:H) from different laboratories. The temperature range 130-300 K was studied. The measurements in all cases reveal two temporal regimes: an early time regime associated with bandtail transport, and a later-time regime associated with deep trapping of the electrons. ...

Fabrication of the Hydrogenated Amorphous Silicon Films Exhibiting High Stability Against Light Soaking

Polarized electroabsorption spectra and light soaking of solar cells based on hydrogenated amorphous silicon

We present grazing-incidence measurements of polarized electroabsorption spectra in p – i – n solar cells based on hydrogenated amorphous silicon (a-Si:H!. We find a significantly stronger polarization dependence in the present measurements compared with earlier work based on electroabsorption detected using coplanar electrodes on a-Si:H thin films. We do not find any significant dependence of ...

Mechanisms of metastability in hydrogenated amorphous silicon

We survey theoretical approaches to understanding the diverse metastable behavior in hydrogenated amorphous silicon. We discuss a recently developed network-rebonding model involving bonding rearrangements of silicon and hydrogen atoms. Using tight-binding molecular dynamics we find non-radiative recombination can break weak silicon bonds with low activation energies, producing dangling bond–fl...

Raman and Ir Study of Narrow Bandgap A-sige and Μc-sige Films Deposited Using Different Hydrogen Dilution

Hydrogenated amorphous silicon-germanium (aSiGe:H) films and n-i-p solar cells near the threshold of microcrystalline formation have been prepared by plasma enhanced chemical vapor deposition (PECVD) with a fixed germane to disilane ratio of 0.72 and a wide range of hydrogen dilution RH=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240. The effects of RH on the structural ...